Investigation of the trap state of Sr2MgSi2O7: Eu2+, Dy3+ phosphor and decay process |
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Authors: | Haoyi Wu Yihua Hu Xiaojuan Wang |
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Institution: | School of Physics & Optoelectronic Engineering, Guangdong University of Technology, Waihuan Xi Road No.100, Higher ed., Guangzhou 510006, PR China |
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Abstract: | The thermoluminescence glow curves of Sr2MgSi2O7: Eu2+, Dy3+ phosphor were measured after various delay times. A single trap center is confirmed that conforms to a kinetics model with order greater than 1, leading to a suppression of TL intensity and a high temperature shift of the TL peak with longer delay times. A constant trap depth supports this phenomenon. Further, the decay curve of the afterglow and the change in initial trapped carrier concentration can be fitted using general-order kinetics and the fitting results show that the afterglow is close to a second-order kinetics process, which implies that most of the released carriers are retrapped. |
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