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Analysis of multiple axisymmetric annular cracks in a piezoelectric medium
Authors:E Asadi
Institution:1. Key Lab of Advanced Transducers and Intelligent Control System, Ministry of Education, Taiyuan University of Technology, Taiyuan 030024, PR China;2. College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan 030024, PR China;3. School of Physics, Shandong University, Jinan 250100, PR China;1. Piezotech Japan, Ltd., Sakyo-ku, Ichijouji, Mukaihata-cho 4, 606-8126 Kyoto, Japan;2. Institute of Science and Technology for Ceramics – ISTEC-CNR, Via Granarolo 64, 48018 Faenza (RA), Italy;3. Kyoto Institute of Technology, Department of Materials Science and Engineering, Matsugasaki, Sakyo-ku, 603-8585 Kyoto, Japan;1. Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, PR China;2. Institute for Applied Materials (IAM), Karlsruhe Institute of Technology (KIT), D-76344 Eggenstein-Leopoldshafen, Germany;3. College of Physics, Beihua University, Jilin 132013, PR China
Abstract:An axisymmetric annular electric dislocation is defined. The solution of axisymmetric electric and Volterra climb and glide dislocations in an infinite transversely isotropic piezoelectric domain is obtained by means of Hankel transforms. The distributed dislocation technique is used to construct integral equations for a system of co-axial annular cracks with so-called permeable and impermeable electric boundary conditions on the crack faces where the domain is under axisymmetric electromechanical loading. These equations are solved numerically to obtain dislocation densities on the crack surfaces. The dislocation densities are employed to determine field intensity factors for a system of interacting annular and/or penny-shaped cracks.
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