Nonequilibrium properties of electron-hole plasma in direct-gap semiconductors |
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Authors: | K. Bohnert M. Anselment G. Kobbe C. Klingshirn H. Haug S. W. Koch S. Schmitt-Rink F. F. Abraham |
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Affiliation: | (1) Institut für Angewandte Physik der Universität Karlsruhe, Kaiserstraße 12, D-7500 Karlsruhe 1, Federal Republic of Germany;(2) Institut für Theoretische Physik der Universität Frankfurt, Robert-Mayer-Straße 8-10, D-6000 Frankfurt/Main 1, Federal Republic of Germany;(3) IBM Research Lab., 5600 Cottle Road, 95193 San Jose, California, USA |
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Abstract: | The gain spectra of the electron-hole plasma recombination in CdS are investigated as a function of the excitation conditions and of the lattice temperature. From a lineshape analysis which includes such many-body effects as collision broadening, single-particle energy renormalization and excitonic enhancement, average plasma parameters are obtained. In contrast to the predictions of quasi-equilibrium theory, one finds that the electron-hole plasma does not reach a full thermal quasi-equilibrium in direct-gap materials because of the short lifetimes of the carriers. The nonequilibrium effects are shown to lead to the formation of electron-hole plasma density fluctuations. No well-defined coexistence region exists. The experimental results in the phase transition region can consistently be explained by theoretical treatments of this nonequilibrium phase transition. |
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