Acoustomagnetoelectric effects at meso-ultrasonic frequencies in anisotropic semiconductors in arbitrary (classical) magnetic fields

Anisotropic acoustomagnetoelectric (AME) effects at meso-ultrasonic frequencies are calculated analytically in semiconductors with an anisotropic mobility () in arbitrary classical magnetic fields. For Bq(q is the ultrasonic wave vector) and an arbitrary direction of q two transverse components of the AME field (E ^B q E _y ^B ) occur in the crystal, and the longitudinal acoustoelectric field changes under the action of a longitudinal magnetic field (E _q ^B =E _q ^B -E _q ⁰ ),E ^B is even, and E ^B is odd in B; for B 1 the component E _y ^B E ^B /B, andE ^B and E _q ^B are independent of B and can be commensurate with the zero-field acoustoelectric field E _q ⁰ if the anisotropy of is large (hexagonal ZnS and ZnO or n-Ge highly compressed along 111]). The transverse AME field E _st ^B is calculated in the configuration E _st ^B qBE _st ^B (standard AMEeffect). For B >> 1 the field B 1E _st ^B B ^–3, so thatE ^B , E _y ^B , and _q ^B can be greater than E _st ^B here. The acoustoelectric analog of the Grabner effect (E _G ^B ), i.e., the component of the AME field along a transverse magnetic field (E _G ^B Bq) is also calculated. For pB > 1 the componentE _G ^B B ^–3.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 93–97, June, 1989.