PIN型和NIP型硅薄膜太阳电池中绒面陷光结构和陷光性能研究

对于硅薄膜太阳电池来说, 无论是PIN型还是NIP型太阳电池, 采用绒面陷光结构来提高入射光的有效利用率是提高太阳电池效率的重要方法之一.本文采用标度相干理论对PIN和NIP型电池的绒面结构的陷光性能进行了数值模拟. 结果表明: PIN电池中前电极和NIP电池中背电极衬底粗糙度分别为160和40 nm时可获得理想的陷光效果; 在不同粗糙度背电极衬底上制备a-SiGe:H电池发现, 使用40和61.5 nm 背电极可获得相当的短路电流密度, 理论分析和实验得到了一致的结果. 关键词： 陷光结构 光散射能力 标量相干理论 硅基薄膜太阳电池

Investigation of light trapping structure and performance in PIN-type and NIP-type thin film silicon solar cells

In both PIN-type and NIP-type thin film silicon solar cells, textured light trapping substrates are used to enhance light absorption and improve energy conversion efficiencies. Scalar scattering theory is used to simulate the light trapping performance of textured substrates. The results indicate that in order to get good light trapping performance, the root mean square (RMS) for front reflectors in PIN-type solar cells should be at least 160 nm, while it is only 40 nm for back reflectors in NIP-type solar cells. A series of a-SiGe:H single-junction solar cells is deposited on back reflectors with different RMS values. It is found that a-SiGe:H solar cells deposited on back reflectors with RMS values of 40 and 61.5 nm demonstrate similar short current density values and quantum efficiencies. These results indicate that RMS value of 40 nm is enough to get good light trapping performance, which is consistent with the numerical simulation.
Keywords： light trapping structure haze scalar scattering theory thin film silicon solar cells