| InSe的高压电输运性质研究 |
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| 引用本文： | 吴宝嘉,李燕,彭刚,高春晓. InSe的高压电输运性质研究[J]. 物理学报, 2013, 62(14): 140702-140702. DOI: 10.7498/aps.62.140702 |
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| 作者姓名： | 吴宝嘉 李燕 彭刚 高春晓 |
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| 作者单位： | 1. 延边大学理学院, 延吉 133002;2. 吉林大学, 超硬材料国家重点实验室, 长春 130012 |
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| 基金项目： | 国家自然科学基金，国家重点基础研究发展计划(批准号:2011CB808204)资助的课题.*Project supported by the National Natural Science Foundation of China，the National Basic Research Program of China |
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| 摘 要： | 高压下对InSe样品进行原位电阻率和霍尔效应测量. 电阻率测量结果显示, 样品在5–6 GPa区间呈现金属特性, 在12 GPa 的压力下发生由斜六方体层状结构到立方岩盐矿的结构相变, 且具有金属特性. 霍尔效应测量结果显示, 样品在6.6 GPa由p型半导体转变成n型半导体, 电阻率随着压力的升高而逐渐下降是由于载流子浓度升高引起的.关键词：InSe高压电阻率霍尔效应
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| 关 键 词： | InSe 高压 电阻率 霍尔效应 |
| 收稿时间： | 2012-08-09 |
Electrical transport properties of InSe under high pressure |
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| Wu Bao-Jia , Li Yan , Peng Gang , Gao Chun-Xiao. Electrical transport properties of InSe under high pressure[J]. Acta Physica Sinica, 2013, 62(14): 140702-140702. DOI: 10.7498/aps.62.140702 |
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| Authors: | Wu Bao-Jia Li Yan Peng Gang Gao Chun-Xiao |
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| Abstract: | Electrical resistivity and Hall-effect in InSe under high pressure are accurately measured in situ. The measurement results of electrical resistivity and the temperature dependence of electrical resistivity show that InSe undergoes semiconductor-to-metal transition at 5-6 GPa and transforms from rhombohedral layered phase P1 (InSe-I) to metallic rocksalt cubic phase P3 (InSe-III) at 12 GPa. Certainly, the pressure-induced metallization of InSe results from the pressure-induced structural phase transition. In addition, Hall-effect measurements display the carrier transport behavior of InSe under pressure, which indicates that InSe undergoes a carrier-type inversion around 6.6 GPa and the increases of the carrier concentration is the dominant factor producing the decrease of the resistivity after 9.9 GPa.
Keywords：InSehigh pressureelectrical resistivityHall-effect |
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| Keywords: | InSe high pressure electrical resistivity Hall-effect |
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