| 低k氟化非晶碳层间介质对芯片性能的影响 |
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| 引用本文： | 蒋昱,吴振宇,汪家友.低k氟化非晶碳层间介质对芯片性能的影响[J].微纳电子技术,2005,42(8):365-368. |
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| 作者姓名： | 蒋昱 吴振宇 汪家友 |
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| 作者单位： | 西安电子科技大学微电子研究所,西安,710071 |
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| 摘 要： | 讨论了通过合理设计的工艺流程将低k氟化非晶碳材料应用到制造工艺中作为互连介质对集成电路性能的影响。基于一个互连结构简化模型计算出采用低k氟化非晶碳材料作为互连介质后RC延迟、功率耗散和线间串扰的变化情况。采用低k氟化非晶碳介质后,RC延迟和功率耗散随着互连长度的增大而减小,线间串扰也得到显著抑制。
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| 关 键 词： | 互连 低介电常数 介质 氟化非晶碳 |
| 文章编号： | 1671-4776(2005)08-0365-04 |
| 修稿时间： | 2004年9月15日 |
Effects of Low-k Fluorinated Amorphous Carbon as Inter-Level Dielectrics on Chip Performance |
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| JIANG Yu,WU Zhen-yu,WANG Jia-you.Effects of Low-k Fluorinated Amorphous Carbon as Inter-Level Dielectrics on Chip Performance[J].Micronanoelectronic Technology,2005,42(8):365-368. |
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| Authors: | JIANG Yu WU Zhen-yu WANG Jia-you |
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| Abstract: | The effects of integrating low-k fluorinated amorphous carbon films as inter-level dielectrics into IC fabrication technologies with properly designed processes on IC performance were discussed. Based on simplified models,RC delay reduction,power dissipation reduction and cross talk of ULSI circuits with or without applications of low-k fluorinated amorphous carbon films were calculated. The RC delay,power dissipation and cross talk decrease significantly with interconnect length increase when low-k fluorinated amorphous carbon films are applied. |
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| Keywords: | interconnect low dielectric constant dielectric fluorinated amorphous carbon |
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