Quantitative Analysis of Ti-Si-Ge/Si-Ge/Si Structures by EDS and AES |
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Authors: | Alexander I Berner Michael Y Beregovsky Moshe M Eizenberg |
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Institution: | (1) Department of Materials Engineering, Technion–Israel Institute of Technology, Haifa 32000, Israel, IL |
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Abstract: | A method for quantitative analysis of Ti-Si-Ge/Si-Ge/Si structures with submicron thick layers by energy dispersive spectroscopy
(EDS) in transmission electron microscopy (TEM) and Auger electron spectroscopy (AES) was developed. Quantitation of the results
of both AES and EDS techniques was performed on the basis of a single reference specimen for the Ti-Si-Ge system comprising
a uniform layer of the Ti(Si0.85Ge0.15)2 phase on a silicon substrate. The reference sample was prepared by the same procedure as the samples used in the study, and
was thoroughly characterized by X-ray diffractometry, transmission electron microscopy and energy dispersive spectroscopy
in scanning electron microscopy. Using this reference sample the elemental sensitivity factors relative to Si were found for
both techniques, which enable us to obtain the elemental depth distributions for the studied samples. Good agreement between
the results obtained by EDS/TEM, AES and supplementary techniques was found. |
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Keywords: | : EDS TEM AES titanium silicon-germanium layers |
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