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First-principles investigation of the asymmetric contact effect on current-voltage characteristics of a molecular device
Authors:Zhang Z  Yang Z  Yuan J  Qiu M
Institution:School of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410076, The People's Republic of China. cscuzzh@163.com
Abstract:The properties of electronic transport in an electronic device composed of a spatially symmetric phenyldithiolate molecule sandwiched between two gold electrodes with asymmetric contact are investigated by the first-principles study. It is found that the I-V and G-V characteristics of a device show significant asymmetry and the magnitudes of current and conductance depend remarkably on the variation of molecule-metal distance at one of the two contacts. Namely, an asymmetric contact would lead to the weak rectifying effects on the current-voltage characteristics of a molecular device. We also calculate self-consistently other microscopic quantities such as the local density of states, the total density of states, and the distribution of charges in the asymmetric molecular models under the applied bias. The results show that the highest-occupied molecular orbital (HOMO) is responsible for the resonant tunneling and the shifting of the HOMO due to the charging of the device under the bias voltage is the intrinsic origin of asymmetric I(G)-V characteristics.
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