Changes produced in the electrical resistivity of ErH2 thin films when converted to ErH3 due to hydrogen treatment

The resistivity of thin films (80–200 Å) of ErH₂ increases sharply when heated for 2 h at 300 °C in vacuum in the presence of hydrogen gas at 10^–2 Torr. This confirms that the films, originally metallic conductor, have become converted to semiconducting ErH₃ which is in conformity with the structural studies. The negative values of TCR also indicate the semiconducting nature of the hydrogen treated films. Activation energies of the films have been evaluated.