Anisotropic resistivity and anisotropic magnetoresistance of the magnetic semiconductor FeCr2S4

Transport measurements were performed on FeCr₂S₄ parallelepipeds with {100} faces, cut from vapour grown crystals. This made possible the separation of the spontaneous effect from the field dependent effect. The anisotropy of the latter effect only depends on the direction of B relative to the crystallographic axes. The anisotropy of the magnetoresistance has been analysed in terms of spin disorder scattering.