Luminescence line shape of free excitons in pure Ge

We report luminescence experiments performed in pure Ge at low temperature. Taking into account the splitting of the ground state of free excitons in this material, we show that their emission line shape is subject to a Gaussian broadening which seems to be due to the phonon lifetime. From this study, we deduce new values of the binding energy of electron-hole drops in Ge and Si which are respectively -2 and -5.6meV.