Electron states in Ge and Si under uniaxial stress |
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| Authors: | L Martinelli M Sani |
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| Institution: | Istituto di Fisica dell''Università - Pisa, Gruppo Nazionale di Struttura della Materia del C.N.R., Pisa, Italy |
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| Abstract: | The electron states in Ge and Si under uniaxial stress in the (100) direction are computed with the pseudopotential method. The theoretical results are compared with optical measurements of the indirect absorption edge in Si and Ge under uniaxial stress and with the polarization dependence and the splittings of donor levels. |
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