Energy band structure of I–III–VI2 semiconductors |
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Authors: | JL Shay B Tell |
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Institution: | Bell Telephone Laboratories, Incorporated, Holmdel, New Jersey 07733, USA |
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Abstract: | We review recent studies of the energy band structure of I-III-VI2 semiconductors. The structure of the uppermost valence bands of a I-III-VI2 compound is profoundly influenced by the proximity of noble metal d levels in the valence band. The direct energy gaps observed in I-III-VI2 compounds are low relative to the energy gaps in the II–VI analogs by amounts up to 1.6eV, and the spin-orbit splittings observed in the ternaries are low relative to the values observed in the binary analogs, owing to a partial cancellation of the positive spin-orbit parameter for p levels and the negative spin-orbit parameter for d levels. The presence of the noble metal d levels in the valence band has been confirmed directly by the observation of electroreflectance structure due to transitions from the d levels themselves to the lowest conduction band minimum. |
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