Interaction between electronic and vibronic Raman scattering in heavily doped silicon |
| |
Authors: | Fernando Cerdeira Tor A Fjeldly Manuel Cardona |
| |
Institution: | Max-Planck-Institut für Festköperforschung, Stuttgart, Federal Republic of Germany |
| |
Abstract: | The asymmetry in the one-phonon Raman lines of heavily doped p-type Si is interpreted as the interference of a continuum of electronic excitations with the phonon line. The dependence of the line shape on the exciting frequency is produced by the different resonant behavior of these two scattering mechanisms. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |