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New insight into the optical properties of amorphous Ge and Si
Authors:J.D. Joannopoulos  Marvin L. Cohen
Affiliation:Department of Physics, University of California and Inorganic Materials Research Division, Lawrence Berkely Laboratory, Berkely, California 94720, U.S.A.
Abstract:A short range disorder model, unlike present long range disorder theories, has been able to account well for both the density of states and the optical properties of amorphous Ge and Si. Our results indicate that the imaginary part of the dielectric function for amorphous Ge and Si has the same form as an averaged gradient matrix element as a function of energy. This conclusion should be valid for all tetrahedrally bonded amorphous solids.
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