Resonant raman scattering at the E1 energy gap of semiconductor crystals |
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Authors: | A. Pinczuk E. Burstein |
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Affiliation: | Depto. Instrumentacion, Com. Nacional de Energia Atomica, Av. del Libertador 8250, Buenos Aires, Argentina;Department of Physics and Laboratory for Research on the Structure of Matter, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA |
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Abstract: | We present a discussion of resonant Raman scattering by optical phonons at the E1 energy gap of group IV and groups III–V compound semiconductor crystals (e.g., Ge and InSb). For allowed scattering by TO and LO phonons, the q-dependent “double resonant” two-band calculation of the Raman tensor may display destructive interference effects when the intermediate electron-hole pairs are uncorrelated. We also discuss the Franz-Keldysh mechanism of resonant electric field induced Raman scattering by LO phonons. The double resonance terms due to this mechanism will, for large electric fields, broaden and have its largest resonance enhancement at the energy gap. |
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