Subquadratic J-V dependence and double injection in GaP

A new model for double injection in semiconductors containing deep traps is proposed whereby analytical prebreakdown J-V characteristics are obtained. The subquadratic behavior of J vs V is explained by the superposition of ohmic and nonohmic terms, their relative weights being related to the distance between the injecting contacts. The theory has been applied to the case of a GaP metal-n-n⁺ structure, giving a good fit of the experimental data.