Atomic Energy Commission Research Establishment, Risø, Roskilde, Denmark;Brookhaven National Laboratory, Upton, New York, 11973, U.S.A.;Physics Laboratory I, H.C. Ørsted Institute, University of Copenhagen, Copenhagen, Denmark
Abstract:
Assuming a simple model for the compound SmS we have performed calculations which indicate a definite tendency toward the observed semiconductor-metal phase transition under pressure. Our results lend support to the hypothesis that the transition is associated with a change in 4f occupancy of the Sm ion.