Possible evidence for the relaxation case in CdS

Possible evidence for the effects characteristic of the relaxation case (in which the dielectric relaxation time τ_d=ε? exceeds the minority carrier diffusion length life time τ₀) was observed by photoconductivity experiment in InCdSIn structure. A deviation from linearity in the relationship between conductivity (σ - σ₀) and light intensity (I) is consistent with an analysis based on the theory of relaxation case semiconductor.