Force-constant changes due to impurities in Si and Ge |
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Authors: | KP Jain AK Prabhakaran |
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Institution: | Department of Physics, Indian Institute of Technology, New-Delhi-29, India |
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Abstract: | Force-constant softening due to impurities in Si and Ge has been estimated, using the band model of sievers and Takeno, to be between 10–15%. The molecular model yields a value of about 20% for the same effect. |
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