|
|||||
|
|
Force-constant changes due to impurities in Si and Ge |
|
| Authors: | KP Jain AK Prabhakaran |
| Institution: | Department of Physics, Indian Institute of Technology, New-Delhi-29, India |
| Abstract: | Force-constant softening due to impurities in Si and Ge has been estimated, using the band model of sievers and Takeno, to be between 10–15%. The molecular model yields a value of about 20% for the same effect. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |