Illumination induced annealing in electron-irradiated p-type silicon |
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Authors: | K. Nakashima |
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Affiliation: | Department of Electrical Engineering, Nagoya Institute of Technology, Nagoya, Japan |
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Abstract: | Illumination with white light during isochronal annealing in p-type Si irradiated with 2 MeV electrons at 77 K introduces stages of recovery at around 85 and 140 K. These stages recover about 90% of carriers removed by the irradiation. |
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