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Illumination induced annealing in electron-irradiated p-type silicon |
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| Authors: | K Nakashima |
| Institution: | Department of Electrical Engineering, Nagoya Institute of Technology, Nagoya, Japan |
| Abstract: | Illumination with white light during isochronal annealing in p-type Si irradiated with 2 MeV electrons at 77 K introduces stages of recovery at around 85 and 140 K. These stages recover about 90% of carriers removed by the irradiation. |
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