Far infrared absorption of amorphous GaAs and Ge |
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| Authors: | RW Stimets J Waldman J Lin TS Chang RJ Temkin GAN Connell |
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| Institution: | Lowell Technological Institute, Lowell, Mass., U.S.A.;Division of Engineering and Applied Physics, Harvard University, Cambridge, Mass., U.S.A. |
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| Abstract: | Far infrared reflection spectra of amorphous GaAs and Ge have been obtained in the frequency region from 30–600 cm?1. For each material, curves of ω?2 vs frequency have been obtained whose corresponding reflectivity curves give a best fit to the data. The peak value of the abdorption coefficient is about 4000 cm?1 for GaAs and 160 cm?1 for Ge. The results are compared with Raman spectra and with theoretical calculations. |
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