|
|||||
|
|
A new negative resistance in n-type germanium induced by a magnetic field |
|
| Authors: | C Hammar |
| Institution: | Microwave Institute Foundation, S-100 44 Stockholm 70, Sweden |
| Abstract: | By changing the mobility anisotropy between non-equivalent minima in the conduction band of n-Ge a magnetic field in the 110] direction can induce a negative resistance at temperatures below 20–30 K. |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ | |