Evidence for stress-induced decoupling of valence bands in GaSb from galvanomagnetic measurements

The behavior of p-GaSb has been examined using uniaxial compressional stresses up to $\text{10}{}^{10}\text{dyn}\text{cm}{}^2$ in the temperature range 50–300°K. Hall effect and resistivity results are interpreted in terms of decoupling of the valence bands, and reduction of the impurity activation energies.