On linewidth of phonons associated to a disorder mechanism |
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| Authors: | P da R Andrade SPS Porto |
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| Institution: | Departments of Electrical Engineering and Physics, University of Southern California, Los Angeles, California 90007, U.S.A. |
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| Abstract: | An expression for the linewidth of phonons associated to a disorder mechanism in crystals is deduced. The linewidth of these ‘noise’ phonons is a function of the correlation time describing the statistical behavior of the disorder mechanism. A new view point to the application of the fluctuation-dissipation theorem for order-disorder crystals is presented. The relationship between the behavior of the linewidth of these phonons and phase-transitions mechanisms is discussed. |
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