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Anomalous magnetoresistance in a zero-gap semiconductor
Authors:L Liu  Muser Tan
Institution:Department of Physics, Northwestern University, Evanston, Illinois 60201, U.S.A.;Fakulti Kejuruteraan, Universiti Malaya, Kuala Lumpur, Malaysia
Abstract:As a result of the anomalous screening in symmetry induced zero-gap semiconductor, such as gray tin, the classical magnetoresistance of a p-type sample at low temperature is expected to have an anomalous dependence on the magnetic field in the sense that it may deviate significantly from the usual H2 behavior.
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