High-resolution electroreflectance measurements of GaAs

High-resolution surface-barrier electroreflectance measurements are reported for GaAs, taken at 4.2 K in the Schottky barrier configuration. Interference effects between the bulk and space-charge regions are seen at the n = 1 exciton line for both E₀ and E₀ + Δ₀ transitions. We calculate the value μ_T = (0.055 ± 0.008) m_e for the transverse mass of the E₁ + Δ₁ transition from Franz-Keldysh oscillations observed at high fields. The E'₀ structure is resolved into separate critical points of Γ and Δ symmetry. Threshold and broadening energies are obtained at 4.2 K for the E₀,E₀, E₀ + Δ₀, E₁, E₁ + Δ₁, E'₀ (Γ and and E₂ (Σ and X) critical points.