Valence band and core level studies of InSb via photoemission measurements in the 20–70 eV range |
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| Authors: | DE Eastman J Freeouf |
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| Institution: | IBM T.J. Watson Research Center, Yorktown Heights, N.Y. 10598, U.S.A.;Division of Engineering and Applied Physics, Harvard University, Cambridge, Massachusetts 02138, U.S.A. |
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| Abstract: | We report photoemission measurements of valence band critical points, core level binding energies and spin-orbit splittings, and Auger processes using synchrotron radiation in the 20–70 eV range for InSb. Based on our studies of InSb and other semiconductors, several precautions when interpreting photoemission data in this energy range (e.g. Auger processes, matrix elements) are discussed. |
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