Auger electron spectroscopy and leed studies of adsorption isotherms: Xenon on (0001) graphite

The passivation mechanism and related natures of silicon surfaces with a very thin natural oxide film baked at low temperature and low pressure (≤ 600°C, 1–5 × 10^?6Torr) was studied principally by the measurement of ESR absorption. Two sorts of resonance lines, which are called the broad and the narrow line hereafter, were observed in the dark by vacuum baking after introducing air. Paramagnetic centers responsible for the broad line have a one-to-one correspondence to such surface states at the silicon-silicon oxide interface that have an electrically amphoteric nature. The narrow line with an intense g-anisotropy originated from trivalent silicons. These ESR lines interact very sensitively with atmospheric gases such as water and oxygen. In addition, light illumination induced two ESR lines different from those observed in the dark. The electron trapped at the surface state forms an intrinsic layer at the surface of n-type silicon. It has been confirmed by present ESR experiments and surface conductance measurements that the passivation effects of this surface to various atmospheric ambients such as water vapor results from the existence of an intrinsic layer at the surface of n-type silicon.