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Comparison of silicon LIII,II electron loss spectra and optical absorption |
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| Authors: | J.E. Rowe S.B. Christman |
| Affiliation: | Bell Laboratories, Murray Hill, New Jersey 07974, USA |
| Abstract: | Threshold structure due to LIII,II excitation in the electron loss spectra of silicon at 100.2 ± 0.3 eV is in good agreement with optical absorption measurements of 100.1 ± 0.1 eV. |
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