Non-Gaussian range profiles in amorphous solids |
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| Authors: | K Wittmaack F Schulz J Maul |
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| Institution: | Gesellschaft für Strahlen- und Umweltforschung mbH, Physikalisch-Technische Abteilung, D - 8042 Neuherberg, Germany |
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| Abstract: | Range profiles of boron in amorphous silicon exhibit pronounced deviations from Gaussian at energies above about 40 keV due to increasing electronic stopping. A detailed comparison with computed profiles allows a semiempirical determination of the electronic stopping cross section (Se ≈ E0.4). |
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