Analysis of derivative spectrum of indirect exciton absorption in silicon

It is shown that an analysis of the wavelength modulated absorption spectrum enables us to estimate the transition matrix elements in indirect absorption. The transition matrix elements in silicon are determined to be $\text{0.110}\text{h}\text{?}\text{A}\text{?}$ for indirect absorption with the TO phonon, $\text{0.0367}\text{h}\text{?}\text{A}\text{?}$ for the LO phonon and 0.0178 $\text{h}\text{?}\text{A}\text{?}$ for the TA phonon.