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Influence of deformation on the mobility and lifetimes of charge-carriers in anthracene crystals |
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| Authors: | FC Aris TJ Lewis JM Thomas JO Williams DF Williams |
| Institution: | Materials Science Dept., School of Electronic Engineering Science, University College of North Wales, Bangor, Caerns., U.K.;Edward Davies Chemical Laboratories, University College of Wales, Aberystwyth, Cards., U.K.;Pure Chemistry Division, N.R.C., Ottawa, Canada |
| Abstract: | Direct determination of the mobilities and lifetimes of electrons and holes in undeformed and in dislocated single-crystals of ultra pure anthracene reveals fresh insights into the mechanism of carrier trapping. The deformation introduced electron traps at depths of approximately 1.0 eV but was found not to affect hole transport. Such traps are considered to be due to impurities preferentially introduced into the lattice as a result of the generation of the additional dislocations. |
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