Dependence of photoluminescence of n-GaAs on surface treatment |
| |
| Authors: | A. Karpol B. Pratt |
| |
| Affiliation: | Physics Department, Technion-Israel Institute of Technology, Haifa, Israel |
| |
| Abstract: | The changes in the intensity, shape and location of characteristic photoluminescence lines caused by various surface treatments in Te doped GaAs samples at 80 K were studied. The depth of the damage caused by such treatment is estimated. An explanation of the shifts of the characteristic lines based on the varying contribution of far donor-acceptor pairs is proposed. |
| |
| Keywords: | |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
