Properties of an optically magnetized semiconductor |
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Authors: | BA Huberman |
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Institution: | Xerox Palo Alto Research Center, 3180 Porter Dr., Palo Alto, Ca. 94304, USA |
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Abstract: | It is shown that the magnetization of a semiconductor by optical means can lead to the existence of two unequal chemical potentials in the degenerate carrier population. The resulting birefringent effects in an otherwise isotropic material are calculated, and it is shown that near resonance these effects can become relatively large for moderate pumping intensities. |
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