Far-infrared detection by GaAs-IREDs and GaAs0.6P0.4-LEDs |
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| Authors: | W. Bock U. Happek K. Moser W. Prettl |
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| Affiliation: | (1) Institut für Angewandte Physik, Universität Regensburg, D-8400 Regensburg, West Germany;(2) Present address: Institut für Angewandte Physik der Universität Münster, D-4400 Münster, West Germany |
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| Abstract: | In GaAs-IREDs and GaAs0.6P0.4-LEDs a photoconductive and a bolometric FIR response has been observed at low temperatures by applying different pulsed optically pumped FIR lasers. The short circuit current responsivity peaks at  =400  m being about 1.5 mA/W. By monitoring the rapid modulation of the FIR radiation due to mode beating of the pump laser, an upper limit of 1 ns was established to the time constant of the photoconductive signal. |
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| Keywords: | FIR detection light emitting diodes response time |
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