首页 | 本学科首页   官方微博 | 高级检索  
     


Effect of carriers localized in clusters on optical properties of In0.21Ga0.79As/GaAs multiple quantum wells
Authors:Ibtissem Fraj  Tarek Hidouri  Faouzi Saidi  Lotfi Bouzaiene  Larbi Sfaxi  Hassen Maaref
Affiliation:Université de Monastir, Laboratoire de Micro-Optoélectronique et Nanostructures (LMON), Faculté des Sciences, Avenue de l''environnment, 5019, Monastir, Tunisia
Abstract:In0.21Ga0.79As multiple quantum wells MQW, with different well thickness L, are grown on [001] and [113] A GaAs growth directions by molecular beam epitaxy MBE. An asymmetric photoluminescence PL line shape denoted LEA and LEB in the lower energies side has been observed in both structures. These emissions of deep localized states can be related to the energy potential modulation associated to Indium cluster formation. Temperature dependence of photoluminescence properties has been reported. Localized state ensemble LSE model has investigated atypical behaviors of PL peak energies and the full width at half maximum FWHM of both emissions. These abnormal behaviors are explained by carriers captured by localized recombination centers. Competition processes between localized and delocalized excitons have been occurred to interpret the PL properties. The degree of localization induced by quantum-dot-like states and critical temperatures between different temperatures regions increase as far as away [001] growth direction.
Keywords:Photoluminescence  Multiple quantum wells  S-shaped form  LSE model
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号