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Band gap dependence with temperature of semiconductors from solar cells electrical parameters |
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| Authors: | S. Bensalem M. Chegaar A. Herguth |
| Affiliation: | 1. Centre de Développement des Energies Renouvelables, CDER, BP 62 Route de l''Observatoire Bouzaréah, 16340 Algiers, Algeria;2. Département de Physique, Faculté des Sciences, Université Sétif 1, 19000 Sétif, Algeria;3. Laboratoire d’Optoélectronique et Composants, Université Sétif 1, 19000 Sétif, Algeria;4. University of Konstanz, Department of Physics, P.O. Box 676, 78457 Konstanz, Germany |
| Abstract: | Using experimental measurements of the open-circuit voltage and the short-circuit current density at different temperatures, for a solar cell, we investigate numerically the band gap evolution with temperature for the semiconductor constituting the concerned device. The application of the approach in the case of silicon semiconductor gives satisfying results compared to previous works. |
| Keywords: | Band gap Semiconductors Temperature Solar cells Open-circuit voltage Short-circuit current density |
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