| Abstract: | A visible light(vis)‐sensitive photoresist based on the concept of chemical amplification was developed utilizing poly(p‐hydroxystyrene) (PHS), 2,2‐bis4‐(2‐(vinyloxy)‐ethoxy)phenyl]propane (BPA‐DEVE) as a crosslinking agent, N‐trifluoromethylsulfonyloxy‐1,8‐naphthalimide (NIT) as a photoacid generator (PAG) and pyrromethene dyes such as 1,3,5,7,9‐pentamethylbipyrromethene difluoroborate (PRH) and 2,8‐diethyl‐1,3,5,7,9‐pentamethylbipyrromethene difluoroborate (PRE) and 3,3′‐carbonylbis(7,7′‐diethylaminocoumarin) (KCD). On irradiation with an argon ion laser, the photopolymer comprising PRH and PRE exhibited a high sensitivity of 65 and 46 mJ cm?2, respectively. It is suggested that the sensitization mechanism of the pyrromethene dye/PAG system involves singlet electron transfer. The sensitivity of the photoresist increased with the decreasing molecular weight of PHS because of the high dissolution rate. Copyright © 2002 John Wiley & Sons, Ltd. |
