Abstract: | Chemical shifts of Auger transitions and photoelectron binding energies of silicon have been measured and interpreted using the quasi-atomic approach. The Si KL2,3L2,3 and L2,3V1V1 Auger transitions and the binding energies of Si 2p and of the valence electrons at the maximum of the density of states V1 have been investigated in solid silicon and in the compounds SiC, Si3N4, SiO2, Na2SiF6 and T3Si (T = V, Cr, Mn, Fe, Co, Ni). The relaxation-energy shift ΔReaS(2p, 2p) describing the polarization effect (final-state effect) has been evaluated by AES and XPS measurements. Furthermore, the extra-atomic relaxation energy ReaD(2p) of the 2p electrons has been determined experimentally for silicon atoms in differing environments. This allows estimation of the potential parameter V(2p) describing the potential effect (initial-state effect). In general ReaD(2p) was found to be more sensitive to changes in chemical bonding than V2p). The behaviour of the quasi-atomic Si V1 electrons seems to be the converse. |