Trend of shape resonance-induced features in the angular distribution parameter as a function of photon energy for carbon,silicon and germanium tetrac |
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| Authors: | MN Piancastelli PR Keller JW Taylor FA Grimm TA Carlson MO Krause D Lichtenberger |
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| Institution: | Department of Chemistry, University of Wisconsin, Madison, WI 53706 U.S.A.;Department of Chemistry, University of Tennessee, Knoxville, TN 37996-1600 U.S.A.;Oak Ridge National Laboratory, Oak Ridge, TN 38930 U.S.A.;Department of Chemistry, University of Arizona, Tucson, AZ, 85721 U.S.A. |
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| Abstract: | The angular distribution parameter as a function of photon energy, β(hν), has been measured in the 13–27 e V range using synchrotron radiation for the five valence orbitais in silicon and germanium tetrachlorides. The results have been compared with those previously reported for carbon tetrachloride. In particular, the trend of shape resonanceinduced features has been followed along the valence isoelectronic series CCl4-SiCl4-GeCl4 for the 1e and 2t2 orbitals. As the atomic number of the central atom increases, the shape resonances move toward the threshold ionization energy for a particular molecular orbital. |
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| Keywords: | Permanent address: Instituto di Chimica Generale Universita di Roma 100185 Roma Italy |
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