Study of the DC biasing effect on insertion losses in high-frequency interconnections |
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Authors: | M Gospodinova V S Mollov R Arnaudov P Philippov |
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Abstract: | The paper deals with an experimental investigation of the behavior of high-frequency Si/SiO2/Al based interconnects when an extra DC bias voltage is applied, by means of which the conductor line changes the surface properties of the semiconductor substrate. By superposing a DC bias to the high-speed signal applied to the line, the insertion losses caused by the semiconductor substrate show a significant decrease over the observed frequency range. In order to study this effect a number of test samples containing several microstrip asymmetric transmission lines were prepared and measured. The obtained results suggest a way of controlling the performance and energy propagation of interconnects on semiconductor substrates. The observed effect can be successfully applied in high-speed blocks with tunable parameters. |
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Keywords: | Interconnections High-frequency effects Line parameters Line models |
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