Mössbauer and channeling measurements on buried layers of CoSi2 in Si

Single crystalline multilayered structures of Si/CoSi₂/Si were made by high dose implantation of Co into a Si wafer which was subsequently annealed. These structures were then investigated with both Mössbauer spectroscopy and channeling measurements. The experiments show that a change occurs in the structure of the CoSi₂ at a temperature between 150 K and 220 K.