非晶态软磁薄膜Fe90-xCoxZr10的平面霍耳效应和磁阻效应

本文研究了非易态软磁薄膜Fe_90-xCo_xZr₁₀的平面霍耳电压及磁阻随磁场方向、成分和温度的变化规律。采用通常的六探针法进行了测量。结果表明平面霍耳电压和磁阻分别满足经验公式V_y=pM²Isin2θ和△ρ=cM²cos2θ;并给出了V_y表达式中的常数项p正比于ρ²。此外,样品Co₉₀Zr₁₀和样品Fe₇₀Co₂₀Zr₁₀晶化前后的V_y变化正好相反,即富钴成分的样品晶化后,V_y增加,而富铁成分的样品V_y下降。关键词：

THE PLANAR HALL EFFECT AND THE MAGNETORESISTANCE EFFECT IN THE AMORPHOUS SOFT MAGNETIC FILM Fe90-xCoxZr10

In this work, the dependence of the planar Hall votage and the magnetoresistance on composition, temperature, and the applied magnetic field has been studied. All the measurements were made by the six probe method. From the results, the planar Hall votage and the magnetoresistance are shown to satisfy the phenomenological formula simultaneously: V_y = p₀M²sin2θ and △ρ = cM²cos2θ, and we obtain an equation V_y = cρ²M²sin2θ. Morever, the change of the planar Hall votage of Co₉₀Zr₁₀ and Fe₇₀ Co₂₀Zr₁₀ after their crystallization are just opposite, that is, the above-mentioned value of the Co-rich one increases, but that of the later one decreases.