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Measurement of optical and electrical properties of silicon microstructuring induced by ArF excimer laser at SF6 atmosphere |
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| Authors: | M.A. Bassam B. Sajad A. Moghimi |
| Affiliation: | a Excimer Laser Lab, Imam Hossain University, P.O. Box 16575-347, Tehran, Iran b Physics Department, Amirkabir University of Technology, P.O. Box 15875-4413, Tehran, Iran c Physics Department, Alzahra University, 1993891176 Tehran, Iran d Chemistry Department, Imam Hossain University, P.O. Box 16575-347, Tehran, Iran e School of Chemical and Biochemical Engineering, University of Sydney, Sydney, Australia |
| Abstract: | The irradiation of ArF excimer laser (193 nm) on Si wafer (〈1 1 1〉, n-type, arsenic-doped, 0.01 Ω cm) in SF6 atmosphere, from vacuum to 1000 mbar, creates a regular self-assembled microstructure owning to a great number of microconical spikes covered with SiF2 (fluorosilyl) layer containing sulfur impurities. The geometry of microstructure as well as the layer thickness varies with the gas pressure and the laser parameters, particularly duration, pulse energy and the dose. In this work, the electrical properties of the layer on the microstructured silicon have been investigated based on electrical impedance spectroscopy (EIS). The measured impedance significantly changes regarding to the unirradiated samples. It was shown that the corresponding electrical conductance and the dielectric constants of the layer are strongly dependent on the gas pressure and UV dose. The layer thickness was also determined in terms of SF6 pressures. |
| Keywords: | Silicon microstructure Excimer laser Electrical impedance spectroscopy (EIS) measurement Photospectroscopy |
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