溶胶凝胶法制备铜铁矿结构p型透明导电氧化物薄膜

铜铁矿结构p型透明导电氧化物(transparent conducting oxide, TCO)薄膜是一类在电子学领域具有广泛应用前景的新材料，因其可与n-TCO薄膜形成真正意义上的“透明器件”而备受关注。本文介绍了铜铁矿结构p-TCO的结构特性以及溶胶凝胶法的基本原理和特点；系统地介绍了溶胶凝胶法制备铜铁矿结构p-TCO薄膜的工艺；分析比较了有机醇盐、无机盐溶胶体系的优缺点；最后讨论了进一步的发展方向，指出溶胶凝胶法是一种高效可行的制备p-TCO薄膜的方法。

Preparation of the Delafossite Structure p Type Transparent Conducting Oxide Thin Films by Sol-Gel Process

The delafossite structure p type transparent conducting oxide (TCO) thin films are promising candidates with potential applications in electronics, because it maybe generate "transparent devices" with n-TCO. In this paper, the structural property of the delafossite structure p-TCO, as well as the basic principle and the characteristic of the sol-gel method are reviewed. The technological process in preparation of the delafossite structure p-TCO thin films by sol-gel method is discussed systematically. The relative advantages and disadvantages of the systems of sol about organic alkoxide and inorganic salt are analyzed, and further development are discussed. It is pointed out that sol-gel method is an effective and feasible means to prepare p-TCO thin films.