| 266 nm飞秒激光烧蚀单晶硅的分子动力学模拟 |
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| 引用本文： | 王丽梅,曾新吾. 266 nm飞秒激光烧蚀单晶硅的分子动力学模拟[J]. 强激光与粒子束, 2008, 20(8) |
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| 作者姓名： | 王丽梅 曾新吾 |
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| 作者单位： | 国防科学技术大学理学院,长沙,410073;国防科学技术大学光电科学与工程学院,长沙,410073 |
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| 基金项目： | 国家高技术发展计划重点实验室基金 |
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| 摘 要： | 基于Stillinger-Weber(SW)势和“x-分区”模型，用分子动力学方法模拟了266 nm飞秒激光烧蚀单晶硅的过程，给出了烧蚀过程的物理图像，烧蚀过程中材料内部缺陷的产生与发展最终导致整层材料被移除。对比研究了烧蚀材料中不同区域粒子的运动轨迹，结果体现了在固、液、气不同状态下粒子的运动特征。模拟了激光诱导应力波的传播，其速度为8.18 km/s。
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| 关 键 词： | 飞秒激光 单晶硅 SW势 分子动力学 应力波 |
| 收稿时间： | 1900-01-01; |
Molecular dynamics simulation of 266 nm femtosecond laser ablation of monocrystalline silicon |
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| WANG Li-mei,ZENG Xin-wu. Molecular dynamics simulation of 266 nm femtosecond laser ablation of monocrystalline silicon[J]. High Power Laser and Particle Beams, 2008, 20(8) |
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| Authors: | WANG Li-mei ZENG Xin-wu |
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| Affiliation: | 1. College of Science, National University of Defense Technology, Changsha 410073, China;2. College of Optoelectric Science and Engineering, National University of Defense Technology, Changsha 410073, China |
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| Abstract: | Based on Stillinger-Weber(SW) potential and “x-section” model, femtosecond laser ablation of monocrystalline silicon was simulated using molecular dynamics method. Snapshots of ablation process were obtained which showed that the emergence and development of internal defects caused a slice of silicon to be removed from the bulk. Traces of atoms in different sections of ablated material were compared which described the characteristics of atoms under states of liquid, solid and gas. Laser-induced stress wave whose velocity was 8.18 km/s was also observed. |
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| Keywords: | Monocrystalline silicon SW potential Molecular dynamics Stress wave |
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