Theoretical prediction of intrinsic self-trapping of electrons and holes in monoclinic HfO2 |
| |
| Authors: | Muñoz Ramo D Shluger A L Gavartin J L Bersuker G |
| |
| Institution: | Department of Physics and Astronomy, University College London and London Centre for Nanotechnology, Gower Street, London WC1E 6BT, United Kingdom. d.ramo@ucl.ac.uk |
| |
| Abstract: | We predict, by means of ab initio calculations, stable electron and hole polaron states in perfect monoclinic HfO2. Hole polarons are localized on oxygen atoms in the two oxygen sublattices. An electron polaron is localized on hafnium atoms. Small barriers for polaron hopping suggest relatively high mobility of trapped charges. The one-electron energy levels in the gap, optical transition energies and ESR g-tensor components are calculated. |
| |
| Keywords: | |
| 本文献已被 PubMed 等数据库收录！ |
|
